XMC1302T038X0064ABXUMA1
Category: ARM Microcontrollers , MCUs Infineon
Infineon 32-bit Microcontrollers with ARM® Cortex®-M0 with focus on low-cost embedded control applications. Packaging: TAPSupplier Type: Authorized Distributor8,444 available Qty Price 1 2.7528 10 2.4552 25 2.3932 50 2.3312 100 2.2692
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IRFB3077PBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon International Rectifier has been at the forefront of power MOSFET design and innovation. The company's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances. Packaging: BLKSupplier Type: Authorized Distributor291 available Qty Price 1 3.3108 10 3.0008 25 2.8892 50 2.7776 100 2.666
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IRFP4227PBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°Coperating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Packaging: RALSupplier Type: Authorized Distributor1,782 available Qty Price 25 2.8981 30 2.8128 60 2.7276 130 2.6424 250 2.5571 1,300 2.4719 2,500 2.3867
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IRLR024NTRPBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Packaging: TRSupplier Type: Authorized Distributor6,000 available Qty Price 2,000 0.4084 4,000 0.396 8,000 0.3836 12,000 0.3713 16,000 0.3589 20,000 0.3465 200,000 0.3341
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IKD06N60RFATMA1
Category: IGBT Chip Infineon Technologies
Infineon Technologies Trans IGBT Chip N-CH 600V 12A 100W 3-Pin(2+Tab) DPAK T/R Packaging: N/ASupplier Type: Authorized Distributor2,400 available Qty Price 1 0.667 10 0.637 25 0.6348 100 0.595 250 0.589 500 0.5885 1,000 0.588
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IRF3205PBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Packaging: BLKSupplier Type: Authorized Distributor67,071 available Qty Price 1 1.9592 10 1.6616 100 1.2896 500 1.09 1,000 0.8878
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IRFP260MPBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Packaging: RALSupplier Type: Authorized Distributor139 available Qty Price 800 1.7707 850 1.7186 1,650 1.6666 4,000 1.6145 8,000 1.5624 40,000 1.5103 80,000 1.4582
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IRLR8726TRPBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon International Rectifier has been at the forefront of power MOSFET design and innovation. The company's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances. Packaging: TAPSupplier Type: Authorized Distributor656 available Qty Price 1 0.8209 10 0.718 25 0.6609 50 0.6051 100 0.5481
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IRF7342TRPBF
Category: MOSFETs Infineon Technologies
Infineon Technologies Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC T/R Packaging: N/ASupplier Type: Authorized Distributor4,000 available Qty Price 4,000 0.5952 8,000 0.568 24,000 0.5668
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IRF7342TRPBF-EL
Category: MOSFET Arrays Infineon
Infineon Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. Packaging: BKNSupplier Type: Authorized Distributor7,500 available
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IRFS7440TRLPBF
Category: MOSFETs Infineon Technologies
Infineon Technologies Trans MOSFET N-CH 40V 208A 3-Pin(2+Tab) D2PAK T/R Packaging: N/ASupplier Type: Authorized Distributor380 available Qty Price 1 1.3378 10 1.2384 25 1.2323 100 1.1087 250 0.8628
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IRFB3407ZPBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon N/APackaging: BLKSupplier Type: Authorized Distributor 35 available Qty Price 1 2.604 10 2.2444 100 1.8352 500 1.5624 1,000 1.3888
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IPD90N04S403ATMA1
Category: MOSFETs Infineon Technologies
Infineon Technologies Trans MOSFET N-CH 40V 90A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Packaging: N/ASupplier Type: Authorized Distributor14,969 available Qty Price 1 0.9822 10 0.9384 25 0.9237 100 0.8799 250 0.8679 500 0.8577 1,000 0.8475 3,000 0.8374 6,000 0.8272
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IRFR7440TRPBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon International Rectifier has been at the forefront of power MOSFET design and innovation. The company's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances. Packaging: BLKSupplier Type: Authorized Distributor462 available Qty Price 1 1.8476 10 1.5128 100 1.1768 500 0.997 1,000 0.8122
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IRF7416TRPBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. Packaging: TAPSupplier Type: Authorized Distributor644 available Qty Price 1 1.214 10 1.0007 25 0.9263 50 0.8519 100 0.7775
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IPG20N06S2L65AATMA1
Category: MOSFETs Infineon Technologies
Infineon Technologies Trans MOSFET N-CH 55V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R Packaging: N/ASupplier Type: Authorized Distributor125,000 available Qty Price 5,000 0.5244 10,000 0.4992 25,000 0.4941
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IPB100N04S204ATMA4
Category: MOSFETs Infineon Technologies
Infineon Technologies Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Packaging: N/ASupplier Type: Authorized Distributor17,000 available
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IRF4905PBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Packaging: RALSupplier Type: Authorized Distributor13,957 available Qty Price 1 1.3264 10 1.2873 30 1.2483 50 1.2093 100 1.1703 250 1.1313 500 1.0923
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IRFR5410TRPBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Packaging: TRSupplier Type: Authorized Distributor20,000 available Qty Price 2,000 0.7202 4,000 0.6984 8,000 0.6765 12,000 0.6547 16,000 0.6329 20,000 0.6111 200,000 0.5892
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BTS3125EJDEMOBOARDTOBO1
Category: Power Management Development Boards and Kits Infineon Technologies
Infineon Technologies Current Limit Switch Board Packaging: N/ASupplier Type: Authorized Distributor3 available
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