Infineon

Showing 21–40 of 83 results

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IRF7342TRPBF-EL

Category: MOSFET ArraysInfineon
Infineon Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Packaging: BKN
Supplier Type: Authorized Distributor
7,500
available
QtyPrice
10.4491

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IRFB3407ZPBF

Category: MOSFETs, Single MOSFETsInfineon
Infineon N/A

Packaging: BLK
Supplier Type: Authorized Distributor
35
available
QtyPrice
12.604
102.2444
1001.8352
5001.5624
1,0001.3888

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IRFR7440TRPBF

Category: MOSFETs, Single MOSFETsInfineon
Infineon International Rectifier has been at the forefront of power MOSFET design and innovation. The company's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.

Packaging: BLK
Supplier Type: Authorized Distributor
462
available
QtyPrice
11.8476
101.5128
1001.1768
5000.997
1,0000.8122

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IRF7416TRPBF

Category: MOSFETs, Single MOSFETsInfineon
Infineon Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Packaging: TAP
Supplier Type: Authorized Distributor
644
available
QtyPrice
11.214
101.0007
250.9263
500.8519
1000.7775

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IRF4905PBF

Category: MOSFETs, Single MOSFETsInfineon
Infineon Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Packaging: RAL
Supplier Type: Authorized Distributor
13,957
available
QtyPrice
11.3264
101.2873
301.2483
501.2093
1001.1703
2501.1313
5001.0923

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IRFR5410TRPBF

Category: MOSFETs, Single MOSFETsInfineon
Infineon Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Packaging: TR
Supplier Type: Authorized Distributor
20,000
available
QtyPrice
2,0000.7202
4,0000.6984
8,0000.6765
12,0000.6547
16,0000.6329
20,0000.6111
200,0000.5892

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IPB042N10N3GATMA1

Category: MOSFETs, Single MOSFETsInfineon
Infineon N/A

Packaging: TAP
Supplier Type: Authorized Distributor
9
available
QtyPrice
13.6084
103.0008
252.79
502.5916
1002.3932

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IRF540NSTRLPBF

Category: MOSFETs, Single MOSFETsInfineon
Infineon Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530L) is available for lowprofile applications.

Packaging: TR
Supplier Type: Authorized Distributor
23,200
available
QtyPrice
8000.7907
1,6000.7675
3,2000.7442
4,8000.7209
6,4000.6977
8,0000.6744
80,0000.6512

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IPB044N15N5ATMA1

Category: MOSFETs, Single MOSFETsInfineon
Infineon The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.

Packaging: TR
Supplier Type: Authorized Distributor
500
available
QtyPrice
1,0006.7662

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IR2104STRPBF

Category: Gate and Power Drivers, Gate Drivers, Mosfet Igbt DriversInfineon
Infineon The IR2104(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts.

Packaging: TAP
Supplier Type: Authorized Distributor
1,983
available
QtyPrice
12.6164
102.356
252.232
502.0584
1001.8972

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IRFS7530TRL7PP

Category: MOSFETsInfineon
Infineon Single N-Channel 60 V 1.4 mOhm 236 nC HEXFET® Power Mosfet - D2PAK-7

Packaging: REEL
Supplier Type: Authorized Distributor
44,800
available
QtyPrice
8001.8476
1,6001.8476
2,4001.8476
3,2001.8476

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TLE9252VSKXUMA1

Category: CAN Interfaces, CAN Transceivers, Controller Area NetworkInfineon
Infineon TLE9252VSKXUMA1 is a high-speed CAN FD transceiver in a 14 pin SOIC package. This transceiver is designed for HS CAN networks up to 5Mbit/s in automotive and industrial applications. As an interface between the physical bus layer and the CAN protocol controller, the TLE9252V drives the signals to the bus and protects the microcontroller against interferences generated within the network. Based on the high symmetry of the CANH and CANL signals, the TLE9252V provides very low electromagnetic emission allowing the operation without a common mode choke. The non-low power modes (Normal-operating Mode and Receive-only Mode) and low power modes (sleep mode and stand-by mode) are optimized for reduced current consumption based on the required functionality. Even in Sleep Mode with a quiescent current below 25µA over the full temperature range, the TLE9252V is able to detect a WUP on the HS CAN bus. The VIO voltage reference input is used to support 3.3V and 5V supplied microcontrollers.

Packaging: TAP
Supplier Type: Authorized Distributor
2,261
available
QtyPrice
12.5668
102.3188
252.17
502.0088
1001.86

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BAS16E6327HTSA1

Category: Rectifiers, Small Signal Switching DiodesInfineon
Infineon High Speed Switching Diode.

Packaging: TR
Supplier Type: Authorized Distributor
9,000
available
QtyPrice
45,0000.0419
51,0000.0406
96,0000.0392
225,0000.0379
450,0000.0366
2,250,0000.0353
4,500,0000.034

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BSP742RIXUMA1

Category: Current Limit Switches, Electromechanical, Power Load Distribution SwitchesInfineon
Infineon N/A

Packaging: BLK
Supplier Type: Authorized Distributor
80
available
QtyPrice
12.3932
102.1452
1001.7236
5001.4136
1,0001.178

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IAUT300N10S5N015ATMA1

Category: MOSFETs, Single MOSFETsInfineon
Infineon N/A

Packaging: TAP
Supplier Type: Authorized Distributor
715
available
QtyPrice
17.006
105.89
255.5552
505.1584
1004.774

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CY8C4014SXI-421

Category: 32 Bit Microcontrollers, MCUsInfineon
Infineon CY8C4xx Series 16 kB Flash 2 kB RAM 16 MHz SMT 32-Bit PSoC®4 -SOIC-16

Packaging: TUBE
Supplier Type: Authorized Distributor
1,072
available
QtyPrice
4801.3392
9601.3392
1,4401.3392
1,9201.3392
2,4001.3392

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FM24C04B-GTR

Category: Ferroelectric RAM (FRAM), FRAM, Fram MramInfineon
Infineon The FM24C04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24C04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24C04B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24C04B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

Packaging: TR
Supplier Type: Authorized Distributor
5,000
available
QtyPrice
6951.5178
7001.4731
1,4001.4285
3,5001.3838
7,0001.3392
35,0001.2946
70,0001.2499

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CY8C20436A-24LQXI

Category: MCUsInfineon Technologies
Infineon Technologies MCU 8-bit M8C CISC 8KB Flash 1.8V/2.5V/3.3V/5V 32-Pin QFN EP Tray

Packaging: N/A
Supplier Type: Authorized Distributor
29,400
available
QtyPrice
2,4504.8893

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CY62167EV30LL-45BVXI

Category: Asynchronous, SRAM ChipInfineon
Infineon CY62167EV30 Series 16 Mb (1M x 16/2M x 8) 2.2 - 3.6 V 45 ns Static RAM -VFBGA-48

Packaging: TRAY
Supplier Type: Authorized Distributor
4,315
available
QtyPrice
111.346
411.346
1511.346
2511.346
5011.346

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CY62167EV30LL-45BVXIT

Category: SRAM ChipInfineon Technologies
Infineon Technologies SRAM Chip Async Single 3V 16M-bit 1M x 16 45ns 48-Pin VFBGA T/R

Packaging: N/A
Supplier Type: Authorized Distributor
100
available
QtyPrice
222.7664
1022.134
5021.9759

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